Progressive evolution of tunneling characteristics of in-situ fabricated intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_{8+delta} single crystals

Stacks of a few intrinsic tunnel junctions were micro-fabricated on the surface of Bi-2212 single crystals. The number of junctions in a stack was tailored by progressively increasing the height of the stack by ion-beam etching, while its tunneling characteristics were measured in-situ in a vacuum chamber for temperatures down to ~13 K. Using this in-situ etching/measurements technique in a single piece of crystal, we systematically excluded any spurious effects arising from variations in the junction parameters and made clear analysis on the following properties of the surface and inner conducting planes. First, the tunneling resistance and the current-voltage curves are scaled by the surface junction resistance. Second, we confirm that the reduction in both the gap and the superconducting transition temperature of the surface conducting plane in contact with a normal metal is not caused by the variation in the doping level, but is caused by the proximity contact. Finally, the main feature of a junction is not affected by the presence of other junctions in a stack in a low bias region.Comment: 25 pages, 7 figures, submitted to Phys. Rev.

Suppressed Superconductivity of the Surface Conduction Layer in Bi2_2Sr2_2CaCu2_2O8+x_{8+x} Single Crystals Probed by {\it c}-Axis Tunneling Measurements

We fabricated small-size stacks on the surface of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO-2212) single crystals with the bulk transition temperature $T_c$$\simeq$90 K, each containing a few intrinsic Josephson junctions. Below a critical temperature $T_c'$ ($\ll$ $T_c$), we have observed a weakened Josephson coupling between the CuO$_2$ superconducting double layer at the crystal surface and the adjacent one located deeper inside a stack. The quasiparticle branch in the $IV$ data of the weakened Josephson junction (WJJ) fits well to the tunneling characteristics of a d-wave superconductor($'$)/insulator/d-wave superconductor (D$'$ID) junction. Also, the tunneling resistance in the range $T_c'$$<$$T$$<$$T_c$ agrees well with the tunneling in a normal metal/insulator/d-wave superconductor (NID) junction. In spite of the suppressed superconductivity at the surface layer the symmetry of the order parameter appears to remain unaffected.Comment: 13 pages, 6 figure

Positivity Bounds on Higgs-Portal Dark Matter

We consider the positivity bounds for WIMP scalar dark matter with effective Higgs-portal couplings up to dimension-8 operators. Taking the superposed states for Standard Model Higgs and scalar dark matter, we show that the part of the parameter space for the effective couplings, otherwise unconstrained by phenomenological bounds, is ruled out by the positivity bounds on the dimension-8 derivative operators. We find that dark matter relic density, direct and indirect detection and LHC constraints are complementary to the positivity bounds in constraining the effective Higgs-portal couplings. In the effective theory obtained from massive graviton or radion, there appears a correlation between dimension-8 operators and other effective Higgs-portal couplings for which the strong constraint from direct detection can be evaded. Nailing down the parameter space mainly by relic density, direct detection and positivity bounds, we find that there are observable cosmic ray signals coming from the dark matter annihilations into a pair of Higgs bosons, $WW$ or $ZZ$.Comment: 31 pages, 6 figures, v2: one-loop corrections to the positivity bounds added, version to be published in JHE

An immunohistochemical study of the pancreatic endocrine cells of the ddN mouse.

The regional distribution and frequency of the pancreatic endocrine cells in the ddN mouse were studied using specific antisera against insulin, glucagon, somatostatin and human pancreatic polypeptide (hPP). In the pancreatic islets, most of insulin-immunoreactive (IR) cells were located in the central region, and glucagon-, somatostatin and hPP-IR cells were located in the peripheral region regardless of the lobe. In the splenic part, glucagon-IR cells were also located in the central regions, and more numerous somatostatin-IR cells were detected in the central regions as compared with the duo-denal part. hPP-IR cells were restricted to the peripheral regions in both lobes but more numerous cells were detected in the duodenal portion. In the exocrine parenchyma of the splenic lobe, only insulin- and glucagon-IR cells were detected but all four kinds of IR cells were observed in the duodenal portion. In addition, insulin and hPP-IR cells were also demonstrated in the pancreatic duct regions. In conclusion, some strain-dependent characteristic distributional patterns of pancreatic endocrine cells were found in the ddN mouse with somewhat different distributional patterns between the two pancreatic lobes

Systematic DC/AC Performance Benchmarking of Sub-7-nm Node FinFETs and Nanosheet FETs

In this paper, we systematically evaluate dc/ac performances of sub-7-nm node fin field-effect transistors (FinFETs) and nanosheet FETs (NSEETs) using fully calibrated 3-D TCAD. The stress effects of all the devices were carefully considered in terms of carrier mobility and velocity averaged within the active regions. For detailed AC analysis, the parasitic capacitances were extracted and decomposed into several components using TCAD RF simulation platform. FinFETs improved the gate electrostatics by decreasing fin widths to 5 nm, but the fin heights were unable to improve RC delay due to the trade-off between on-state currents and gate capacitances. The NSEETs have better on-state currents than do the FinFETs because of larger effective widths (W-eff) under the same device area. Particularly p-type NSEETs have larger compressive stress within the active regions affected by metal gate encircling all around the channels, thus improving carrier mobility and velocity much. On the other hand, the NSEETs have larger gate capacitances because larger W-eff increase the gate-to-source/drain overlap and outer-fringing capacitances. In spite of that, sub-7-nm node NSEETs attain better RC delay than sub-7-nm node as well as 10-nm node FinFETs for standard and high performance applications, showing better chance for scaling down to sub-7-nm node and beyond.11Ysciescopu